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savantic semiconductor product specification silicon pnp power transistors 2SA1301 d escription with to-3pl package complement to type 2sc3280 applications power amplifier applications recommended for 80w high fidelity audio frequency amplifier output stage pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -160 v v ceo collector-emitter voltage open base -160 v v ebo emitter-base voltage open collector -5 v i c collector current -12 a i b base current -1.2 a p c collector power dissipation t c =25 120 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pl) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1301 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;i b =0 -160 v v cesat collector-emitter saturation voltage i c =-8a ;i b =-0.8a -0.9 -2.5 v v be base-emitter voltage i c =-6a ; v ce =-5v -1.0 -1.5 v i cbo collector cut-off current v cb =-160v; i e =0 -5 a i ebo emitter cut-off current v eb =-5v; i c =0 -5 a h fe-1 dc current gain i c =-1a ; v ce =-5v 55 160 h fe-2 dc current gain i c =-6a ; v ce =-5v 35 f t transition frequency i c =-1a ; v ce =-5v 30 mhz c ob collector output capacitance f=1mhz;v cb =-10v 480 pf h fe-1 classifications r o 55-110 80-160
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1301 package outline fig.2 outline dimensions (unindicated tolerance:0.50 mm)
savantic semiconductor product specification 4 silicon pnp power transistors 2SA1301

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